1/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a 4v drive pch mosfet um6j1n z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) two rsu002p03 transistors in a single umt package. 2) the mosfet elements are independent, eliminating mutual interference. 3) mounting cost and area can be cut in half. z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) um6j1n tn 3000 type z absolute maximum ratings (ta=25 c) ?1 ?2 parameter v v dss symbol v v gss a i d a i dp mw / total p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed ?1 pw10s, duty cycle1% ?2 each terminal mounted on a recommended land ?30 150 ?55 to +150 20 0.2 0.4 150 mw / element 120 z thermal resistance parameter c/w / total rth(ch-a) symbol limits unit c hannel to ambient ? each terminal mounted on a recommended land 833 c/w / element 1042 ? each lead has same dimensions umt6 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) 1pin mark abbreviated symbol : j01 (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ?1 esd protection diode ?2 body diode ?2 ?2 ?1 ?1 (1) (6) (3) (4) (2) (5)
um6j1n data sheet 2/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time ? 10 av gs =20v, v ds =0v ? 30 ?? vi d = ? 1ma, v gs =0v ??? 1 av ds = ? 30v, v gs =0v ? 1.0 ?? 2.5 v v ds = ? 10v, i d = ? 1ma ? 0.9 1.4 i d = ? 0.2a, v gs = ? 10v ? 1.4 2.1 ? ? i d = ? 0.15a, v gs = ? 4.5v ? 1.6 2.4 ? i d = ? 0.15a, v gs = ? 4v 0.2 ?? sv ds = ? 10v, i d = ? 0.15a ? 30 ? pf v ds = ? 10v ? 4 5 ? pf v gs =0v ? 8 ? pf f=1mhz ? 5 ? ns ? 30 ? ns ? 40 ? ns ?? ns v dd ? 15 v i d = ? 0.15a v gs = ? 10v r l 100? r g =10? ? pulsed ? ? ? ? ? ? z body diode characteristics (source-drain) v sd ??? 1.2 v i s = ? 0.1a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ?pulsed ? z electrical characteristic curves drain-source voltage : ?v ds (v) 0.01 1 10 100 0.1 1 10 10 0 capacitance : c (pf) fig.1 typical capacitance vs. drain-source voltag e ta=25c f=1mhz v gs =0v ciss crss coss drain current : ?i d (a) 0.01 1 10 100 1000 0.1 1 switching time : t (ns) fig.2 switching characteristics ta=25c v dd = ?15v v gs = ?10v r g =10? pulsed tf td(off) td(on) tr total gate charge : qg (nc) 0 0 1 2 3 4 5 6 7 8 0.2 0.4 0.6 0.8 1 gate-source voltage : ?v gs (v) fig.3 dynamic input characteristi cs ta=25c v dd = ?15v i d =?200ma r g =10? pulsed gate-source voltage : ?v gs (v) 0.001 0.01 0.1 1 1.4 1.6 2.01.8 2.8 3.0 3.2 3.4 2.2 2.4 2.6 drain current : ?i d (a) fig.4 typical transfer characteristi cs v ds = ?10v pulsed ta=125c 75c 25c ?25c gate-source voltage : ?v gs (v) 0 0 15 5 10 20 21 0 468 19 357 static drain-source on-state resistance : r ds (?) fig.5 static drain-source on-state resistance vs . gate-source voltage ta=25c pulsed i d = ?200ma i d = ?125ma source-drain voltage : ?v sd (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 .6 0.01 0.1 1 reverse drain current : ?i s (a) fig.6 reverse drain current vs. source-drain voltage v gs =0v pulsed ta=125c 75c 25c ?25c
um6j1n data sheet 3/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a drain current : ?i d (a) 0.01 0.1 0.1 10 1 1 static drain-source on-state resistance : r ds (on) (?) v gs = ? 10v pulsed ta=125c 75c 25c ?25c fig.7 static drain-source on-state resistance vs. drain current ( ) drain current : ?i d (a) 0.01 0.1 0.1 10 1 1 static drain-source on-state resistance : r ds (on) (?) v gs = ? 4.5v pulsed ta=125c 75c 25c ?25c fig.8 static drain-source on-state resistance vs. drain current ( ? ) drain current : ?i d (a) 0.01 0.1 0.1 10 1 1 static drain-source on-state resistance : r ds (on) (?) v gs = ? 4v pulsed ta=125c 75c 25c ?25c fig.9 static drain-source on-state resistance vs. drain current ( ?? ) drain current : ?i d (a) static drain-source on-state resistance : r ds (on) (?) fig.10 static drain-source on-state resistance vs. drain current ( ) 0.01 0 1 10 0.1 1 ta=25c pulsed v gs = ?4v v gs = ?10v v gs = ?4.5v z notice this product might cause chip aging and breakd own under the large electrified environment. please consider to design esd protection circuit.
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